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info@sliit.lk
CAREER SUMMARY
- Head of Department/Senior Lecturer (2017 – date)
Department of Materials Engineering, Faculty of Engineering, Sri Lanka Institute of Information Technology (SLIIT), Sri Lanka.
- Research Associate (2005 – 2017)
Department of Materials, Loughborough University, UK.
- Research Fellow (2001-2004)
School of Engineering Sciences, University of Southampton, UK.
- PhD candidate (1996-2001)
Department of Materials and Metallurgy, University of Cambridge, UK
- Lecturer (1994-1996)
Department of Materials, University of Moratuwa, Sri Lanka
ACADEMIC QUALIFICATIONS
- PhD in Materials Science and Metallurgy
University of Cambridge (2001)
- BSc Eng (First Class Honours) in Materials Engineering
University of Moratuwa (1994)
RESEARCH INTERESTS AND MEMBERSHIP
Research Interests
- High temperature materials
- Nickel base superalloys
- 9Cr steels, Materials modelling
- High performance computing in materials science
- Thermodynamics
- Coupled thermodynamics/kinetic modelling
- Diffusion in multicomponent systems
- Diffusion in semiconductor materials, Si and SiGe.
Memberships
- Affiliate Member
Institute of Materials, Minerals and Mining (IOM3)
- Committee Member
Materials Chemistry Committee, IOM3
PUBLICATIONS
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Diffusion of Boron in Silicon and Silicon-Germanium in the presence of Carbon
Mudith SA Karunaratne, Janet M Bonar, Jing Zhang, Peter Ashburn, Arthur FW Willoughby, “Defect and Diffusion Forum” , pp. 998-1003
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Effect of fluorine implantation dose on boron transient enhanced diffusion and boron thermal diffusion in Si(1-x)/Ge(x)
H. A. W. El Mubarek, M. Karunaratne, J. M. Bonar, G. D. Dilliway, Y. Wang, P. L. F. Hemment, A. F. Willoughby, and P. Ashburn, “IEEE Transactions on Electron Devices” , pp. 518-526
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Effect of point defect injection on diffusion of boron in silicon and silicon-germanium in the presence of carbon
M. S. A. Karunaratne, A. F. W. Willoughby, J. M. Bonar, J. Zhang and P. Ashburn, “Journal of applied physics” , pp. 113531
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Suppression of boron diffusion due to carbon during rapid thermal annealing of SiGe based device materials-some comments
M. S. A. Karunaratne, J. M. Bonar, P. Ashburn and A. F. W Willoughby, “Journal of materials science” , pp. 113-1016
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Diffusion and activation of dopants in silicon and advanced silicon-based materials
Peter Pichler, Christophe J Ortiz, Benjamin Colombeau, Nicholas EB Cowern, Evelyne Lampin, Suresh Uppal, MSA Karunaratne, Janet M Bonar, Arthur FW Willoughby, Alain Claverie, Filadelfo Cristiano, Wilfried Lerch, Silke Paul, “Physica Scripta” , pp. 89
